1 motorola smallsignal transistors, fets and diodes device data
maximum ratings rating symbol 2n6515 2n6519 2n6517 2n6520 unit collector emitter voltage v ceo 250 300 350 vdc collector base voltage v cbo 250 300 350 vdc emitter base voltage 2n6515, 2n6516, 2n6517 2n6519, 2n6520 v ebo 6.0 5.0 vdc base current i b 250 madc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) 2n6515 2n6519 2n6517, 2n6520 v (br)ceo 250 300 350 e e e vdc collector base breakdown voltage (i c = 100 m adc, i e = 0 ) 2n6515 2n6519 2n6517, 2n6520 v (br)cbo 250 300 350 e e e vdc emitter base breakdown voltage (i e = 10 m adc, i c = 0) 2n6515, 2n6517 2n6519, 2n6520 v (br)ebo 6.0 5.0 e e vdc 1. pulse test: pulse width 300 s, duty cycle 2.0%. order this document by 2n6515/d semiconductor technical data
case 2904, style 1 to92 (to226aa) 1 2 3 voltage and current are negative for pnp transistors ? motorola, inc. 1997 collector 3 2 base 1 emitter collector 3 2 base 1 emitter npn pnp rev 1
2 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit off characteristics (continued) collector cutoff current (v cb = 150 vdc, i e = 0) 2n6515 (v cb = 200 vdc, i e = 0) 2n6519 (v cb = 250 vdc, i e = 0) 2n6517, 2n6520 i cbo e e e 50 50 50 nadc emitter cutoff current (v eb = 5.0 vdc, i c = 0) 2n6515, 2n6517 (v eb = 4.0 vdc, i c = 0) 2n6519, 2n6520 i ebo e e 50 50 nadc on characteristics (1) dc current gain (i c = 1.0 madc, v ce = 10 vdc) 2n6515 2n6519 2n6517, 2n6520 (i c = 10 madc, v ce = 10 vdc) 2n6515 2n6519 2n6517, 2n6520 (i c = 30 madc, v ce = 10 vdc) 2n6515 2n6519 2n6517, 2n6520 (i c = 50 madc, v ce = 10 vdc) 2n6515 2n6519 2n6517, 2n6520 (i c = 100 madc, v ce = 10 vdc) 2n6515 2n6519 2n6517, 2n6520 h fe 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 e e e e e e 300 270 200 220 200 200 e e e e collector emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 20 madc, i b = 2.0 madc) (i c = 30 madc, i b = 3.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) e e e e 0.30 0.35 0.50 1.0 vdc base emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 20 madc, i b = 2.0 madc) (i c = 30 madc, i b = 3.0 madc) v be(sat) e e e 0.75 0.85 0.90 vdc baseemitter on voltage (i c = 100 madc, v ce = 10 vdc) v be(on) e 2.0 vdc small signal characteristics current gain e bandwidth product (1) (i c = 10 madc, v ce = 20 vdc, f = 20 mhz) f t 40 200 mhz collectorbase capacitance (v cb = 20 vdc, i e = 0, f = 1.0 mhz) c cb e 6.0 pf emitterbase capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) 2n6515, 2n6517 2n6519, 2n6520 c eb e e 80 100 pf switching characteristics turnon time (v cc = 100 vdc, v be(off) = 2.0 vdc, i c = 50 madc, i b1 = 10 madc) t on e 200 m s turnoff time (v cc = 100 vdc, i c = 50 madc, i b1 = i b2 = 10 madc) t off e 3.5 m s 1. pulse test: pulse width 300 s, duty cycle 2.0%.
3 motorola smallsignal transistors, fets and diodes device data figure 1. dc current gain i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 h fe , dc current gain 200 100 20 30 50 70 v ce = 10 v t j = 125 c 25 c 55 c 2n6515 npn i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 h fe , dc current gain 200 100 20 30 50 70 v ce = 10 v t j = 125 c 25 c 55 c 2n6519 pnp figure 2. dc current gain i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 200 100 10 20 50 70 v ce = 10 v t j = 125 c 25 c 55 c 2n6517 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 v ce = 10 v t j = 125 c 25 c 55 c 2n6520 figure 3. currentgain e bandwidth product i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 30 50 70 2n6515, 2n6517 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2n6519, 2n6520 f , currentgain e bandwidth product (mhz) t f , currentgain e bandwidth product (mhz) t h fe , dc current gain h fe , dc current gain 10 100 20 30 50 70 10 t j = 25 c v ce = 20 v f = 20 mhz t j = 25 c v ce = 20 v f = 20 mhz 30 200 100 10 20 50 70 30
4 motorola smallsignal transistors, fets and diodes device data figure 4. aono voltages i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 v, voltage (volts) 1.4 1.2 0 0.6 0.8 1.0 2n6515, 2n6517 npn i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2n6519, 2n6520 pnp figure 5. temperature coefficients i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2.5 2n6515, 2n6517 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2n6519, 2n6520 figure 6. capacitance v r , reverse voltage (volts) 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 100 2.0 3.0 5.0 70 2n6515, 2n6517 v r , reverse voltage (volts) 2n6519, 2n6520 c, capacitance (pf) 1.0 v, voltage (volts) 0.4 0.2 t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 1.4 1.2 0 0.6 0.8 1.0 0.4 0.2 t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 r v , temperature coefficients (mv/ c) q r v , temperature coefficients (mv/ c) q 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 r q vc for v ce(sat) r q vb for v be 25 c to 125 c 55 c to 25 c 55 c to 125 c i c i b 10 r q vc for v ce(sat) r q vb for v be 25 c to 125 c 55 c to 25 c 55 c to 125 c i c i b 10 c, capacitance (pf) 7.0 10 20 30 50 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t j = 25 c t j = 25 c c cb c eb c cb c eb 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 100 2.0 3.0 5.0 70 1.0 7.0 10 20 30 50
5 motorola smallsignal transistors, fets and diodes device data figure 7. turnon time i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 t, time (ns) 1.0 k 20 10 2n6515, 2n6517 npn i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2n6519, 2n6520 pnp figure 8. turnoff time i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2n6515, 2n6517 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2n6519, 2n6520 30 50 70 100 200 300 500 700 t, time (ns) t d @ v be(off) = 2.0 v t r v ce(off) = 100 v i c /i b = 5.0 t j = 25 c t d @ v be(off) = 2.0 v t r v ce(off) = 100 v i c /i b = 5.0 t j = 25 c t, time (ns) 10 k 100 200 300 500 700 1.0 k 2.0 k 3.0 k 5.0 k 7.0 k 20 30 50 70 100 200 300 500 700 1.0 k 2.0 k v ce(off) = 100 v i c /i b = 5.0 i b1 = i b2 t j = 25 c v ce(off) = 100 v i c /i b = 5.0 i b1 = i b2 t j = 25 c t s t f t s t f 1.0 k 20 10 30 50 70 100 200 300 500 700
6 motorola smallsignal transistors, fets and diodes device data figure 9. switching time test circuit 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 r(t), transient thermal resistance (normalized) 10 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k t, time (ms) figure 10. thermal response 500 200 100 50 20 10 5.0 2.0 1.0 0.5 i c , collector current (ma) 0.5 1.0 2.0 5.0 10 20 50 100 200 500 v ce , collectoremitter voltage (volts) figure 11. active region safe operating area design note: use of transient thermal resistance data figure a t p p p p p t 1 1/f duty cycle t 1 f t 1 t p peak pulse power = p p t a = 25 c 1.0 ms 10 m s t c = 25 c 100 m s 100 ms +10.8 v 9.2 v +v cc 2.2 k 20 k 50 50 w sampling scope 1/2msd7000 1.0 k v cc adjusted for v ce(off) = 100 v approximately 1.35 v (adjust for v (be)off = 2.0 v) pulse width 100 m s t r , t f 5.0 ns duty cycle 1.0% for pnp test circuit, reverse all voltage polarities d = 0.5 0.2 0.1 0.05 single pulse single pulse z q jc(t) = r(t) ? r q jc t j(pk) t c = p (pk) z q jc(t) z q ja(t) = r(t) ? r q ja t j(pk) t a = p (pk) z q ja(t) current limit thermal limit (pulse curves @ t c = 25 c) second breakdown limit curves apply below rated v ceo 2n6515 2n6519 2n6517, 2n6520
7 motorola smallsignal transistors, fets and diodes device data package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 12.70 l 0.250 6.35 n 0.080 0.105 2.04 2.66 p 0.100 2.54 r 0.115 2.93 v 0.135 3.43 1 style 1: pin 1. emitter 2. base 3. collector case 02904 (to226aa) issue ad
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